NTD6600N
PACKAGE DIMENSIONS
DPAK
CASE 369C?01
ISSUE O
NOTES:
?T?
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
B
C
2. CONTROLLING DIMENSION: INCH.
V
R
E
DIM
INCHES
MIN MAX
MILLIMETERS
MIN MAX
A
B
0.235 0.245
0.250 0.265
5.97 6.22
6.35 6.73
4
A
Z
C
D
E
0.086 0.094
0.027 0.035
0.018 0.023
2.19 2.38
0.69 0.88
0.46 0.58
S
1
2
3
K
U
F
G
H
J
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.94 1.14
4.58 BSC
0.87 1.01
0.46 0.58
K
0.102 0.114
2.60 2.89
F
L
D
2 PL
J
H
L
R
S
U
V
Z
0.090 BSC
0.180 0.215
0.025 0.040
0.020 ???
0.035 0.050
0.155 ???
2.29 BSC
4.57 5.45
0.63 1.01
0.51 ???
0.89 1.27
3.93 ???
G
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6
0.063
6 .17 2
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
相关PDF资料
NTD70N03R-1G MOSFET N-CH 25V 10A IPAK
NTD78N03T4G MOSFET N-CHAN 25V 78A DPAK
NTD80N02-1G MOSFET N-CH 24V 80A IPAK
NTD85N02R-001 MOSFET N-CH 24V 12A IPAK
NTD95N02RT4G MOSFET N-CH 24V 12A DPAK
NTDV18N06LT4G MOSFET N-CH 60V 18A DPAK
NTDV20N06T4G MOSFET N-CH 60V 20A DPAK
NTDV3055L104-1G MOSFET N-CH 60V 12A IPAK
相关代理商/技术参数
NTD6600NT4 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD6600NT4G 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD6N40 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(2+Tab) DPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTD6N40/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 6 Amps, 400 Volts
NTD6N40-001 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTD6N40T4 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTD70N03R 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD70N03R-001 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube